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| Silicon Junction FETs (Small Signal) 2SJ364 Silicon P-Channel Junction FET For analog switch unit: mm 2.10.1 s Features 0.65 0.425 1.250.1 0.425 1 2.00.2 1.30.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25C) 0.2 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 -20 -10 150 150 -55 to +150 Unit V mA mA mW C C 1: Source 2: Drain 3: Gate 0.90.1 0.70.1 0 to 0.1 0.20.1 EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol (Example): 4M s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min - 0.2 typ max -6 10 Unit mA nA V V mS pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O - 0.2 to -1 4MO P - 0.6 to -1.5 4MP Q -1 to -3 4MQ R -2.5 to -6 4MR Marking Symbol 0.15-0.05 +0.1 0.3-0 q Low ON-resistance q Low-noise characteristics +0.1 1 Silicon Junction FETs (Small Signal) PD Ta 200 -4.0 Ta=25C 175 -3.5 -2.5 2SJ364 ID VDS -3.0 VDS=-10V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) Drain current ID (mA) 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -2 -4 -6 -8 -10 -12 VGS=0V -2.0 -1.5 0.2V 0.4V 0.6V 0.8V -1.0 - 0.5 0 0 1 2 3 4 5 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 4.0 16 VDS=-10V f=1kHz Ta=25C | Yfs | ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 24 Ciss, Coss, Crss VDS VDS=-10V f=1kHz Ta=25C f=1MHz VGS=0 Ta=25C Forward transfer admittance |Yfs| (mS) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 Forward transfer admittance |Yfs| (mS) 14 12 10 8 6 4 2 0 20 16 Ciss 12 8 4 Coss Crss 0 -1 -3 -10 -30 -100 1.5 1.0 0.5 0 0 -2 -4 -6 -8 -10 -12 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) 2 |
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